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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3635
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3635 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER 2SK3635 2SK3635-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* High voltage: VDSS = 200 V * Gate voltage rating: 30 V * Low on-state resistance RDS(on) = 0.43 MAX. (VGS = 10 V, ID = 4.0 A) * Low Ciss: Ciss = 390 pF TYP. * Built-in gate protection diode * TO-251/TO-252 package * Avalanche capability rated (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
200 30 8.0 24 24 1.0 150 -55 to +150 8 6.4 8 2.4
V V A A W W C C A mJ A mJ (TO-252)
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2 Note3 Note3
IAS EAS IAR EAR
Repetitive Avalanche Current Repetitive Avalanche Energy
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 100 V, RG = 25 , VGS = 20 0 V, L = 100 H 3. Tch 125C, RG = 25 , VDD = 100 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D15932EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
The mark
shows major revised points.
2001
2SK3635
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 160 V VGS = 10 V ID = 8.0 A IF = 8 A, VGS = 0 V IF = 8 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 200 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 100 V, ID = 4.0 A VGS = 10 V RG = 0 2.5 3 3.5 5 0.34 390 95 45 5 7 19 6 12 2 6 1.0 110 360 0.43 MIN. TYP. MAX. 10 10 4.5 UNIT
A A
V S pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90% 90%
VGS VGS
Wave Form
0
10%
VGS
90%
IAS ID VDD
ID ID
Wave Form
0 10%
10%
Starting Tch = 1 s Duty Cycle 1%
td(on) ton
tr
td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D15932EJ2V0DS
2SK3635
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF SAFE OPERATING AREA
100
FORWARD
BIAS
25
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
0 25 50 75 100 125 150 175
20
80
60
15
40
10
20
5
0
0 0 25 50 75 100 125 150 175
TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA
100 ID(DC) = 8.0 A 10 RDS(on) Lim ited (VGS = 10 V) PW = 100 s 1 ms DC 1 10 m s
TC - Case Temperature - C
ID - Drain Current - A
Power Dissipation Lim ited 0.1
0.01 0.1 1 10 100 1000
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - C/W
Rth(j-A) = 125C/W 100
10
Rth(j-C) = 5.21C/W
1
0.1 100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D15932EJ2V0DS
3
2SK3635
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
30 Pulsed 25
FORWARD TRANSFER CHARACTERISTICS
100
VDS = 10 V Pulsed
10 1 0.1 0.01 0.001 0.0001 0 5 10 15
Tch = 125C 75C 25C -25C
ID - Drain Current - A
15
VGS = 10 V
10
5
0 0 5 10 15 20 25 30
VDS - Drain to Source Voltage - V
ID - Drain Current - A
20
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
VDS = 10 V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
5 VDS = 10 V ID = 1 mA 4.5
| yfs | - Forward Transfer Admittance - S
Pulsed
10
VGS(off) - Gate Cut-off Voltage - V
4
3.5
1
TA = 125C 75C 25C -25C
3
0
2.5
2 -50 -25 0 25 50 75 100 125 150
0 0.01 0.1 1 10 100
Tch - Channel Temperature - C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - RDS(on) - Drain to Source On-state Resistance -
2
Pulsed
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 ID = 8.0 A 4.0 A 1.6 A Pulsed
1.5
1
0.5
VGS = 10 V
0 0.01
0.1
1
10
100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15932EJ2V0DS
2SK3635
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance -
1.4 1.2 1 0.8 0.6 4.0 A 0.4 0.2 0
-50 -25 0 25 50 75 100 125 150
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
VGS = 10 V Pulsed
C iss
Ciss, Coss, Crss - Capacitance - pF
100
ID = 8.0 A
Coss 10 Crss
VGS = 0 V f = 1 MHz 1 0.1 1 10 100 1000
Tch - Channel Temperature - C SWITCHING CHARACTERISTICS
100
VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS
240 12
VDS - Drain to Source Voltage - V
200 180 160 140 120 100 80 60 40 20
td(off)
VDD = 160 V 100 V 40 V
10
8
10
tr tf td(on)
6 VGS 4
VDS
2
1 0.1 1 10 100
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0
ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 Pulsed VGS = 0 V 10
QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
1000
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
100
1
10
0.1
VGS = 0 V di/dt = 100 A/s
0.01 0 0.5 1 1.5
1 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D15932EJ2V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 100 V VGS = 10 V RG = 0
220
ID = 8.0 A
2SK3635
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
100
100
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 100 V RG = 25 VGS = 20 0 V IAS 8 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
IAS = 8 A
10
VDD = 100 V RG = 25 VGS = 20 0 V Starting Tch = 25C
80
60
1
EAS = 6.4 mJ
40
20
0.1 0.01
0
0.1
1
10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D15932EJ2V0DS
2SK3635
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
2) TO-252 (MP-3Z)
1.5 -0.1
+0.2
5.0 0.2
1.6 0.2
0.5 0.1
0.8 4.3 MAX.
4
5.5 0.2 13.7 MIN.
6.5 0.2 5.0 0.2 4
1.5 -0.1
+0.2
6.5 0.2
2.3 0.2
2.3 0.2 0.5 0.1
1
2
3
7.0 MIN.
1
2
3
1.1 0.2
+0.2
0.5 -0.1
2.3 2.3
0.75
0.5 -0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
0.7
1.1 0.2
2.0 MIN.
5.5 0.2 10.0 MAX.
1.0 MIN. 1.8TYP.
Data Sheet D15932EJ2V0DS
7
2SK3635
* The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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